metal-insulator transition
英 [ˈmetl ˈɪnsjuleɪtə(r) trænˈzɪʃn]
美 [ˈmetl ˈɪnsəleɪtər trænˈzɪʃn]
金属-绝缘体转变
双语例句
- Metal-insulator Transition on a Half Filled Triangular Lattice
半填充三角格点中的金属&绝缘相变 - As t> 73nmt the films show the bulk-like transport properties. While as t < 73nm, the resistance of the films was too large and the metal-insulator transition temperature ( Tp) becomes unmeasurable.
当t>73nm的时候，薄膜呈现出与块材类似的输运特点，而当t<73nm的时候，薄膜的电阻太大以至于薄膜的金属-绝缘体转变温度（Tp）变得不可测量。 - Metal-insulator transition of two-dimensional double exchange model
2维双交换模型的金属-绝缘体转变 - Through the measurement of the electronic properties of samples we can draw a conclusion that for x < 2%, the dopant cause the metal-insulator transition shift to low temperature and increase the resistance of samples.
通过对样品的电输运特性的测量表明，在掺杂量（x）低于2%时，掺杂引起电阻的增大并降低了金属-绝缘体转变温度； - Effect of Shallow Donor on Magnetic-Field-Induced Metal-Insulator Transition in n-Hg_ ( 1-x) Cd_xTe
浅施主杂质态在n－Hg（1－x）CdxTe磁致金属－绝缘体相变中的作用 - Asymmetric Hubbard Model and Mott Metal-Insulator Transition
不对称Hubbard模型与Mott金属-绝缘体相变 - It is found that with increasing TiO_2 doping level, the resistivity increases obviously, and the metal-insulator transition temperature T_p decreases.
实验发现，随着TiO2掺杂量的增加，电阻率明显增大，金属-绝缘相转变温度Tp值下降。 - Lattice effects on the metal-insulator transition temperature of manganese oxide perovskites
晶格效应对锰钙钛矿相变温度的影响 - The EM Wave Absorption and Metal-Insulator Transition of A1 Particles of the Nanometer Level
nmAl粒子的电磁波吸收和金属-绝缘体相变 - Compared with the pure La2/ 3Ca1/ 3MnO3, experimental results show that the metal-insulator transition temperature ( Tp) of all the doped composites obviously increases and the resistivity extremely decreases.
实验结果表明：与纯La2/3Ca1/3MnO3相比，整个复合样品的金属-绝缘体相变温度TP明显的向高温移动，同时其电阻值减小； - The results at zero-temperature and finite temperature are analyzed, the possibility and critical temperature of Mott metal-insulator transition is also investigated.
在绝对零度和有限温度对结果作了分析，讨论了Mott金属-绝缘体相变的转变温度。 - The metal-insulator transition temperature ( TMI) varies from 190K to 240K commonly for the as-grown samples.
溅射后无处理时薄膜的金属&绝缘体转变温度点通常在190～240K之间。 - As one of 3d transition metal oxides, vanadium dioxide undergoes first-order metal-insulator near 68 ° C. The phase transition is always accompanied by dramatic changes in optical and electrical properties.
作为一种3d过渡金属氧化物，二氧化钒在68°C附近发生金属与半导体之间的相变，发生相变时通常伴随着光学和电学常数的巨大变化。 - It is due to not only their potential technological applications in magnetoelectronics, but also their abundant physical characteristics originating from the strong correlation of the multiple quantum parameters, such as the sensitivity to external fields, metal-insulator transition, phase separation and so on.
这不仅是因为其在磁电子学领域的潜在应用，还源自其由于多重量子序的关联而展现出的丰富的物理特性，如外场下的敏感响应，金属绝缘体转变，相分离等。